2SD334

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD334 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 3 A PC 75 W Tj 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD334 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 4V 2.5 V VCB= 40V; IE= 0 ICBO Collector Cutoff Current VCB= 110V; IE= 0 50 μA 1 mA hFE DC Current Gain IC= 1A ; VCE= 4V 40 260 hFE Classifications R 40-80 O 70-150 Y 130-260 isc Website：www.iscsemi.cn