2SD362

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD362 DESCRIPTION ·With TO-220C package ·Collector-base voltage: VCBO=150V ·Collector current :IC=5A ·Collector dissipation : PC=40 (TC=25℃) APPLICATIONS ·For B/W TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 150 70 8 5 40 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=1mA; IE=0 IC=2mA; RBE=∞ IE=1mA; IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=100V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=5V IC=0.5A ; VCE=5V 20 10 MIN 150 70 8 TYP. 2SD362 MAX UNIT V V V 1.0 1.5 20 20 140 V V μA μA MHz hFE classifications N 20-50 R 40-80 O 70-140 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD362 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD362 4