2SD380

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD380 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICM Collector Current-Peak 7 A IBM Base Current-Peak Collector Power Dissipation @ TC≤90℃ Junction Temperature 3.5 A PC 50 W TJ 130 ℃ Tstg Storage Temperature Range -65~130 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD380 MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 10 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.6 V VCB= 750V ; IE= 0 ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 100 μA 1 mA hFE DC Current Gain IC= 5A ; VCE= 10V 5 15 tf Fall Time IC= 5A, IBend= 1.5A, LB= 5μH 0.9 μs tstg Storage Time 11 μs isc Website：www.iscsemi.cn 2