2SD381

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD381 DESCRIPTION ·With TO-220C package ·Complement to type 2SB536 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed power switching PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ Open emitter Open base Open collector CONDITIONS VALUE 130 120 5 1.5 3.0 0.3 1.5 UNIT V V V A A A PT Total power dissipation TC=25℃ 20 150 -50~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD381 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 120 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 2.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=3V; IC=0 1.0 μA hFE-1 DC current gain IC=5mA ; VCE=5V 25 hFE-2 DC current gain IC=0.3A ; VCE=5V 40 250 COB Output capacitance IE=0 ; VCB=10V; f=1MHz 25 pF fT Transition frequency IC=0.1A ; VCE=5V 45 MHz hFE-2 Classifications N 40-80 M 60-120 L 80-160 K 120-250 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD381 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3