2SD402

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD402 DESCRIPTION ・With TO-220C package ・Complement to type 2SB547 ・High breakdown voltage APPLICATIONS ・Designed for use in line-operated color TV vertical deflection of complementary symmetry circuit PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 200 150 5 2.0 3.0 1.5 20 150 -50~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case MAX 4.16 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD402 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA 2.0 V ICBO Collector cut-off current VCB=150V; IE=0 50 μA IEBO Emitter cut-off current VEB=4V; IC=0 50 μA hFE DC current gain IC=0.4A ; VCE=10V 40 fT Transition frequency IC=0.4A ; VCE=10V 7 MHz CC Collector capacitance IE=0 ; VCB=10V;f=1.0MHz 45 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD402 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3