2SD424

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD424 DESCRIPTION ・With TO-3 package ・Complement to type 2SB554 ・High power dissipation ・High collector-emitter breakdown voltage : VCEO=180V(min) APPLICATIONS ・Power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 180 180 5 15 1.5 150 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD424 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=0.1A ;IB=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=10A; IB=1A 3.0 V VBE Base-emitter on voltage IC=10A ; VCE=5V 2.5 V ICBO Collector cut-off current VCB=90V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=2A ; VCE=5V 40 140 COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 300 pF fT Transition frequency IC=2A ; VCE=5V 5 MHz hFE Classifications R 40-80 O 70-140 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD424 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3