2SD425

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 DESCRIPTION ・With TO-3 package ・Complement to type 2SB555/556 ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2SD425 VCBO Collector-base voltage 2SD426 2SD425 VCEO Collector-emitter voltage 2SD426 VEBO IC IE PC Tj Tstg Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 120 5 12 12 100 150 -65~150 V A A W ℃ ℃ Open emitter 120 140 V CONDITIONS VALUE 140 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD425 2SD426 MIN TYP. MAX UNIT 2SD425 V(BR)CEO Collector-emitter breakdown voltage 2SD426 IC=0.1A ;IB=0 140 V 120 V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 5 V 2SD425 VCEsat Collector-emitter saturation voltage 2SD426 IC=7A; IB=0.7A 3.0 IC=6A; IB=0.6A V VBE Base-emitter on voltage IC=7A ; VCE=5V 2.5 V ICBO Collector cut-off current VCB=50V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=2A ; VCE=5V 40 140 fT Transition frequency IC=2A ; VCE=5V 5 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD425 2SD426 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3