2SD458

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD458 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Power Dissipation: PC= 80W(Max)@TC=25℃ APPLICATIONS ·Designed for high power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE= 50Ω Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE 600 600 400 5 5 10 2 3 80 150 -65~150 UNIT V V V V A A A A W ℃ ℃ IBM PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICER hFE PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain CONDITIONS IC= 10mA; IB= 0 IE= 1mA; IC= 0 IC= 5A; IB= 1A B 2SD458 MIN 400 5 TYP. MAX UNIT V V 1.5 3.0 1.0 6.5 50 V V mA IC= 5A; IB= 1A B VCE= 600V; RBE= 50Ω IC= 5A; VCE= 5V hFE Classifications Q 15-50 R 6.5-30 isc Website：www.iscsemi.cn