2SD476

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD476 2SD476A DESCRIPTION ・With TO-220C package ・Complement to type 2SB566/566A APPLICATIONS ・For low frequency power amplifier power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Tc=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SD476 VCEO Collector-emitter voltage 2SD476A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 60 5 4 8 40 150 -55~150 V A A W ℃ ℃ CONDITIONS Open emitter VALUE 70 50 V UNIT V Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO PARAMETER Collector-base breakdown voltage 2SD476 IC=50mA; RBE=∞ 2SD476A V(BR)EBO VCEsat VBEsat ICBO hFE-1 hFE-2 fT Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain Transition frequency IE=10μA; IC=0 IC=2 A;IB=0.2 A IC=2 A;IB=0.2 A VCB=50V; IE=0 IC=0.1A ; VCE=4V IC=1A ; VCE=4V IC=0.5A ; VCE=4V CONDITIONS IC=10μA ; IE=0 2SD476 2SD476A MIN 70 50 TYP. MAX UNIT V V(BR)CEO Collector-emitter breakdown voltage V 60 5 1.0 1.2 1 35 60 7 200 MHz V V V μA Switching times ton toff tstg Turn-on time Turn-off time Storage time IC=0.5A ; VCC=10.5V IB1=-IB2=0.05 A 0.3 3.0 2.5 μs μs μs hFE-2 classifications B 60-120 C 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD476 2SD476A Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD476 2SD476A 4