2SD5071

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High speed ・High breakdown voltage ・Built-in damper diode APPLICATIONS ・Color TV horizontal output application PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD5071 ・ Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 800 6 3.5 10 50 150 -55~150 UNIT V V V A A W ℃ ℃ 1 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD5071 TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=2.5 A;IB=0.8A 8.0 V VBEsat Base-emitter saturation voltage IC=2.5 A;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=4V; IC=0 40 200 mA hFE DC current gain IC=0.5A ; VCE=5V 8 fT Transition frequency IC=0.5A ; VCE=10V 3 MHz VF Diode forward voltage IF=3.5A IC=3A;RL=66.7Ω;VCC=200V IB1=0.8A;IB2=-1.6A 2.0 V tf Fall time 0.4 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD5071 Fig.2 Outline dimensions 3