2SD5075T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD5075T DESCRIPTION ・With TO-220C package ・High breakdown voltage ・High speed switching APPLICATIONS ・Color TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 3.5 10 75 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD5075T TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8A 8.0 V VBEsat IEBO Base-emitter saturation voltage IC=2.5A;IB=0.8A VEB=5V; IC=0 1.5 V Emitter cut-off current 1.0 mA μA ICBO Collector cut-off current VCB=800V; IE=0 10 hFE DC current gain IC=1.5 A ; VCE=5V 8 fT Transition frequency IC=0.5 A ; VCE=10V IC=3A;IB1=0.8A;IB2=-1.6A VCC=200V;RL=66.7Ω 3 MHz μs tf Fall time 0.4 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD5075T Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3