2SD5076

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD5076 DESCRIPTION ・With TO-3PML package ・High breakdown voltage ・High speed switching APPLICATIONS ・Color TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 5 16 60 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD5076 MAX UNIT VCEsat Collector-emitter saturation voltage IC=4A;IB=0.8A 5.0 V VBEsat IEBO Base-emitter saturation voltage IC=4A;IB=0.8A VEB=5V; IC=0 1.5 V Emitter cut-off current 1.0 mA μA ICBO Collector cut-off current VCB=800V; IE=0 10 hFE DC current gain IC=1 A ; VCE=5V 8 fT Transition frequency IC=1 A ; VCE=10V IC=4A;IB1=0.8A;IB2=-1.6A VCC=200V;RL=50Ω 3 MHz μs tf Fall time 0.4 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD5076 Fig.2 Outline dimensions 3