2SD525

2SD525

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SD525 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2SD525 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD525 DESCRIPTION ・With TO-220C package ・Complement to type 2SB595 ・High breakdown voltage :VCEO=100V ・Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS ・Power amplifier applications ・Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 100 100 5 5 -5 40 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IE=10mA; IC=0 IC=4A;IB=0.4 A IC=1A ; VCE=5V VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz 40 20 12 100 MIN 100 5 TYP. 2SD525 MAX UNIT V V 2.0 1.5 100 1 240 V V μA mA MHz pF hFE-1 classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD525 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3
2SD525
物料型号: - 型号:2SD525

器件简介: - 2SD525是一种硅NPN功率晶体管,采用TO-220C封装,是2SB595型号的补充。特点包括高击穿电压(VCEO=100V)和低集电极饱和电压(VCE(sat)=2.0V最大值)。

引脚分配: - 引脚1:基极(Base) - 引脚2:集电极,连接到安装底座(Collector; connected to mounting base) - 引脚3:发射极(Emitter)

参数特性: - 集-基电压(VCBO):100V - 集-射电压(VCEO):100V - 发-基电压(VEBO):5V - 集电极电流(Ic):5A - 发射极电流(IE):-5A - 集电极功耗(Pc):40W - 结温(T):150°C - 存储温度(Tstg):-55至150°C

功能详解: - 2SD525适用于功率放大应用,推荐用于30W高保真音频频率放大器输出阶段。

应用信息: - 功率放大应用,特别推荐用于30W高保真音频频率放大器的输出阶段。

封装信息: - 封装类型:TO-220C - 封装图示和尺寸详见文档中的Fig.2,未标注的公差为±0.10mm。
2SD525 价格&库存

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