2SD531

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD531 DESCRIPTION ・With TO-220C package ・High current capability APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 90 8 5 43 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA; RBE=∞ IC=5mA; IE=0 IE=5mA; IC=0 IC=4A;IB=0.4 A VCB=100V; IE=0 VEB=6V; IC=0 IC=0.1A ; VCE=2V 60 MIN 90 100 8 TYP. 2SD531 MAX UNIT V V V 2.0 0.1 0.1 V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD531 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3