2SD536

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD536 DESCRIPTION ·With TO-3 package ·High voltage,high speed ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·General purpose power amplifiers PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 200 200 5 10 5 100 150 -55~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA ;IB=0 IC=0.1mA ;IE=0 IE=0.1mA ;IC=0 IC=5A; IB=1A IC=5A; IB=1A VCB=200V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=5V 50 MIN 200 200 5 TYP. 2SD536 MAX UNIT V V V 1.0 1.5 0.1 0.1 V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD536 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3