2SD551

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD551 DESCRIPTION ·With TO-3 package ·Complement to type 2SB681 ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 12 15 100 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A; IB=0.5A IC=1A ; VCE=5V VCB=150V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IE=0; VCB=10V;f=1MHz IC=1A ; VCE=5V 40 20 250 15 MIN 150 5 TYP. 2SD551 MAX UNIT V V 2.5 1.5 0.1 0.1 140 V V mA mA pF MHz hFE Classifications O 40-80 R 70-140 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD551 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3