2SD552

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD552 DESCRIPTION ·With TO-3 package ·Complement to type 2SB552 APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 220 180 5 15 4 150 150 -55~200 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD552 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 180 V VCEsat Collector-emitter saturation voltage IC=10A; IB=1A 2.0 V VBEsat Base-emitter saturation voltage IC=10A; IB=1A 2.5 V ICBO Collector cut-off current VCB=220V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=5V 25 80 COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 160 pF fT Transition frequency IC=1A ; VCE=10V 4 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD552 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3