2SD553

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD553 DESCRIPTION ·With TO-220C package ·Complement to type 2SB553 ·Low collector saturation voltage APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current TC=25℃ Open emitter Open base CONDITIONS VALUE 70 50 5 7 1 40 UNIT V V V A A Open collector PC Collector power dissipation Ta=25℃ 1.5 150 -50~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA; IB=0 IC=4A; IB=0.4A IC=4A; IB=0.4A VCB=70V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=4A ; VCE=1V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=4V 70 30 250 10 MIN 50 0.2 0.9 TYP. 2SD553 MAX UNIT V 0.4 1.2 30 50 240 V V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IB1=- IB2=0.3A RL=10Ω; VCC=30V 0.2 2.5 0.5 μs μs μs hFE-1Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD553 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD553 4