2SD568

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD568 DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A ·Complement to Type 2SB707 APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB B Base Current-Continuous Total Power Dissipation @ TC=25℃ 3.5 A 40 W PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD568 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 3A; VCE= 1V 40 200 hFE-2 DC Current Gain IC= 5A; VCE= 1V 20 hFE-1 Classifications M 40-80 L 60-120 K 100-200 isc Website：www.iscsemi.cn 2