2SD5703

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5703 DESCRIPTION ·High Breakdown Voltage：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A IC Collector Current- Pulse Collector Power Dissipation @ TC=25℃ 30 A PC 70 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD5703 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.5 V ICES Collector Cutoff Current VCE= 1400V; VBE= 0 1 mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA ICBO Collector Cutoff Current VEB= 4V; IC= 0 1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 15 40 hFE-2 DC Current Gain IC= 8A; VCE= 5V IC= 6A, IB1= 1.2A; IB2= -2.4A; VCC= 200V; RL= 33.3Ω 5.3 7.3 tf Fall Time 0.3 μs isc Website：www.iscsemi.cn 2