2SD582

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD582 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 7A ·Complement to Type 2SB612 APPLICATIONS ·Designed for 80~100W audio amplifier power output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 2 A PC 100 W Tj 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD582 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 140 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A B 1.5 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 160V; IE= 0 10 μA hFE-1 DC Current Gain IC= 1A; VCE= 5V 35 200 hFE-2 DC Current Gain IC= 7A; VCE= 5V 20 hFE-1 Classifications A 35-70 B 60-120 C 100-200 isc Website：www.iscsemi.cn