2SD612

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB632/632K ·High collector dissipation ·Wide area of safe operation APPLICATIONS ·25V/35V, 2A low-frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION 2SD612 2SD612K · Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SD612 VCBO Collector-base voltage 2SD612K 2SD612 VCEO Collector-emitter voltage 2SD612K VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-peak Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ Open collector Open base 35 5 2 3 1 W V A A Open emitter 35 25 V CONDITIONS VALUE 25 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter breakdown voltage 2SD612 IC=1mA; RBE=∞ 2SD612K 2SD612 IC=10μA ;IE=0 2SD612K IE=10μA ;IC=0 IC=1.5A ;IB=0.15A IC=1.5A ;IB=0.15A VCB=20V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=2V IC=1.5A ; VCE=2V IC=50mA ; VCE=10V f=1MHz ; VCB=10V CONDITIONS 2SD612 2SD612K MIN 25 TYP. MAX UNIT V(BR)CEO V 35 25 V 35 5 0.3 1.1 0.8 1.5 1 1 60 30 100 30 MHz pF 320 V V V μA μA V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Switching times ton tf tstg Turn-on time Fall time Storage time IC=500mA ; VCE=12V IB1=-IB2=50mA 0.05 0.10 0.40 μs μs μs hFE-1 Classifications D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD612 2SD612K Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD612 2SD612K 4