2SD627

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD627 DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·For use in horizontal deflection output stages for color TV receivers PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 6 3 6 50 150 -45~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD627 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 600 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.6A 10 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.6A 1.6 V ICBO Collector cut-off current VCB=1000V; IE=0 50 μA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC current gain IC=2A ; VCE=10V 5 25 tf Fall time ICP=2.5A 1.0 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD627 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3