2SD633

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 DESCRIPTION ·With TO-220C package ·Complement to type 2SB673/675 ·DARLINGTON ·High DC current gain ·Low saturation voltage APPLICATIONS ·High power switching ·Hammer drive,pulse motor drive PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SD633 VCBO Collector-base voltage 2SD635 2SD633 VCEO Collector-emitter voltage 2SD635 VEBO IC IB B CONDITIONS VALUE 100 UNIT Open emitter 60 100 Open base 60 Open collector 5 7 0.7 TC=25℃ 40 150 -50~150 V V Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD633 V(BR)CEO Collector-emitter breakdown voltage 2SD635 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SD633 ICBO Collector cut-off current 2SD635 IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain IC=3A; IB=6mA IC=7A; IB=14mA IC=3A; IB=6mA VCB=100V; IE=0 IC=50mA; IB=0 CONDITIONS 2SD633 2SD635 MIN 100 TYP. MAX UNIT V 60 1.5 2.0 2.5 V V V 100 VCB=60V; IE=0 VEB=5V; IC=0 IC=3A ; VCE=3V IC=7A ; VCE=3V 2000 1000 3.0 15000 μA mA Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=6mA VCC=45V;RL=15Ω 0.8 3.0 2.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD633 2SD635 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3