2SD634

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD634 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A ·Complement to Type 2SB674 APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC IB B Collector Current-Continuous 7 A Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 0.2 A PC 40 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD634 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA B 2.0 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 3A; IB= 6mA B 2.5 V μA Collector Cutoff Current VCB= 80V; IE= 0 100 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE-1 DC Current Gain IC= 3A ; VCE= 3V 2000 15000 hFE-2 DC Current Gain IC= 7A ; VCE= 3V 1000 Switching times μs μs μs ton Turn-on Time IB1= -IB2= 6mA; RL= 15Ω; VCC= 45V; PW= 20μs, Duty Cycle≤1% 0.8 tstg Storage Time 3.0 tf Fall Time 2.5 isc Website：www.iscsemi.cn 2