2SD640

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD640 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V (Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V (Max.)@ IC= 5A APPLICATIONS ·High voltage switching applications. ·High power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 2 A PC 100 W Tj 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD640 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 2.0 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 1A; VCE= 5V 25 140 COB Output Capacitance IE= 0; VCB= 50V; ftest= 1.0MHz 70 pF fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz Switching Times ton Turn-on Time 1.0 μs tstg Storage Time IB1= -IB2= 0.3A; VCC= 200V 3.0 μs tf Fall Time 0.6 μs isc Website：www.iscsemi.cn