2SD649

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3 A ICP Collector Current-Pulse 5 A PC Collector Power Dissipation @ TC≤90℃ 35 W TJ Junction Temperature 130 ℃ Tstg Storage Temperature Range -65~130 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD649 MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A B 7.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.5 V VCB= 750V ; IE= 0 ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 100 μA 1 mA hFE DC Current Gain IC= 3A; VCE= 10V 4 12 tf Fall Time IC= 3A, IBend= 1A, LB= 20μH 1 μs tstg Storage Time 13 μs isc Website：www.iscsemi.cn 2