2SD669

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A DESCRIPTION ・With TO-126 package ・Complement to type 2SB649/649A ・High breakdown voltage VCEO:120/160V ・High current 1.5A ・Low saturation voltage,excellent hFE linearity APPLICATIONS ・For low-frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SD669 VCBO Collector-base voltage 2SD669A 2SD669 VCEO Collector-emitter voltage 2SD669A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-peak Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ℃ ℃ Open collector Open base 160 5 1.5 3 1 W V A A Open emitter 180 120 V CONDITIONS VALUE 180 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD669 IC=10mA; RBE=∞ 2SD669A 2SD669 IC=1m A ;IE=0 2SD669A IE=1mA ;IC=0 IC=0.5A ;IB=50mA IC=150mA ; VCE=5V VCB=160V; IE=0 2SD669 hFE-1 DC current gain 2SD669A hFE-2 fT COB DC current gain Transition frequency Collector output capacitance IC=0.5A ; VCE=5V IC=150mA ; VCE=5V f=1MHz ; VCB=10V IC=150mA ; VCE=5V CONDITIONS 2SD669 2SD669A MIN 120 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 160 180 V 180 5 1.0 1.5 10 60 60 30 140 14 MHz pF 320 200 V V V μA V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBE ICBO Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current hFE Classifications hFE-1 2SB649 2SB649A B 60-120 60-120 C 100-200 100-200 D 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD669 2SD669A Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A 4 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A 5