2SD675

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD675 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) ·High Power Dissipation: PC= 100W(Max)@TC=25℃ ·Complement to Type 2SB655 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE 160 160 5 12 20 100 150 -55~150 UNIT V V V A A W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 50mA; RBE= ∞ IE= 5mA; IC= 0 IC= 6A; IB= 0.6A B 2SD675 MIN 160 5 TYP. MAX UNIT V V 2.5 1.5 0.1 60 20 200 V V mA IC= 1A; VCE= 5V VCB= 120V; IE= 0 IC= 1A; VCE= 5V IC= 6A; VCE= 5V hFE-1 Classifications B 60-120 C 100-200 isc Website：www.iscsemi.cn