2SD676

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD676 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) ·High Power Dissipation: PC= 125W(Max)@TC=25℃ ·Complement to Type 2SB656 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE 160 160 5 12 20 125 150 -55~150 UNIT V V V A A W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD676 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A B 2.5 V VBE(on) ICBO Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V Collector Cutoff Current VCB= 120V; IE= 0 0.1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 60 200 hFE-2 DC Current Gain IC= 6A; VCE= 5V 20 hFE-1 Classifications B 60-120 C 100-200 isc Website：www.iscsemi.cn