2SD683

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD683 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) ·High DC Current Gain: hFE= 500(Min.)@ IC= 5A APPLICATIONS ·High voltage and high power switching applications. ·Motor driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC IB B Collector Current-Continuous 15 A Base Current Collector Power Dissipation @TC=25℃ Junction Temperature 2 A PC 150 W ℃ ℃ Tj Tstg 150 Storage Temperature Range -65~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 VECF COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain C-E Diode Forward Voltage Output Capacitance CONDITIONS IC= 5A; L= 10mH IC= 10A; IB= 0.2A IC= 10A; IB= 0.2A VCB= 600V; IE= 0 VEB= 5V; IC= 0 IC= 5A; VCE= 5V IC= 15A; VCE= 5V IF= 10A VCB= 50V, IE= 0; ftest= 1MHz 100 500 30 MIN 400 TYP 2SD683 MAX UNIT V 2.0 2.5 0.5 30 V V mA mA 3.0 V pF Switching Times Turn-On Time Storage Time Fall Time VCC=150V; IB1= -IB2= 0.1A 0.4 15 3.0 μs μs μs ton ts tf isc Website：www.iscsemi.cn