2SD684

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD684 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 300V(Min) ·High DC Current Gain: hFE= 1500(Min.)@IC= 2A ·Low Collector-Emitter Saturation Voltage: VCE(sat)= 2.0V(Max) @IC= 4A APPLICATIONS ·Igniter applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 1 A PC 30 W ℃ TJ 150 Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD684 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 40mH 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA B 2.0 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 4A; IB= 40mA B 2.5 V μA μA Collector Cutoff Current VCB= 600V; IE= 0 500 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 500 hFE-1 DC Current Gain IC= 2A; VCE= 2V 1500 hFE-2 DC Current Gain IC= 4A; VCE= 2V 200 COB Collector Output Capacitance VCB= 50V, IE= 0; ftest= 1MHz 35 pF Switching Times μs μs μs ton Turn-On Time IC= 4A; IB1= -IB2= 40mA; RL= 25Ω,VCC =100V 1.0 ts Storage Time 8.0 tf Fall Time 5.0 isc Website：www.iscsemi.cn 2