2SD687

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD687 DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・DARLINGTON ・High DC current gain APPLICATIONS ・Switching applications ・Hammer drive,pulse motor drive ・Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Maximum absolute ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 60 40 5 3 25 150 -50~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=25mA; IB=0 IC=2A; IB=4mA IC=2A; IB=4mA VCB=60V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V 2000 1000 MIN 40 TYP. 2SD687 MAX UNIT V 1.5 2.0 20 2.5 V V μA mA Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=6mA VCC=30V;RL=10Ω 0.1 1.0 0.2 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD687 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3