2SD725

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD725 DESCRIPTION ・With TO-3 package ・High voltage ,high speed ・Low collector saturation voltage APPLICATIONS ・For high voltage,power switching and TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 600 5 7 50 150 -65~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD725 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1 A 5.0 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1 A 1.5 V ICBO Collector cut-off current VCB=800V;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 36 hFE-2 DC current gain IC=5A ; VCE=5V 5 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD725 Fig.2 Outline dimensions 3