2SD726

INCHANGE Semiconductor isc Product Specification isc Silicon NPNPower Transistor 2SD726 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 80V(Min) ·High Power Dissipation ·Complement to Type 2SB690 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature 8 A PC 40 W TJ 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPNPower Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 50mA; RBE= ∞ IE= 10μA; IC= 0 MIN TYP. 2SD726 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage 80 V V(BR)EBO Emitter-Base Breakdown Voltage 5 V VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 2.0 V Base-Emitter On Voltage IC= 1A; VCE= 5V VCB= 80V; IE= 0 1.5 V Collector Cutoff Current 0.1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 60 200 hFE-2 DC Current Gain IC= 0.1A; VCE= 5V 35 COB Collector Output Capacitance IE= 0; VCB= 20V; f= 1MHz 40 pF fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 10 MHz hFE-1 Classifications B 60-120 C 100-200 isc Website：www.iscsemi.cn 2