2SD732

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD732 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V (Min) ·High Current Capability ·Complement to Type 2SB696 APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A PC Collector Power Dissipation @TC=25℃ 80 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD732 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.6 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 mA hFE DC Current Gain IC= 1A; VCE= 5V 40 320 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 15 MHz hFE Classifications C 40-80 D 60-120 E 100-200 F 160-320 isc Website：www.iscsemi.cn