2SD733

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD733 2SD733K DESCRIPTION ・With TO-3 package ・Complement to type 2SB697/697K ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2SD733 VCBO Collector-base voltage 2SD733K 2SD733 VCEO Collector-emitter voltage 2SD733K VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 160 6 12 20 100 150 -40~150 V A A W ℃ ℃ Open emitter 180 140 V CONDITIONS VALUE 160 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD733 2SD733K MIN TYP. MAX UNIT 2SD733 V(BR)CEO Collector-emitter breakdown voltage 2SD733K IC=50mA ;IB=0 140 V 160 2SD733 V(BR)CBO Collector-emitter breakdown voltage 2SD733K IC=5mA ;IE=0 160 V 180 V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=6A; IB=0.6A 0.7 2.5 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=-5V 40 320 hFE-2 DC current gain IC=5A ; VCE=5V 20 fT Transition frequency IC=1A ; VCE=5V 15 MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD733 2SD733K Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3