2SD743A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD743 2SD743A DESCRIPTION ・With TO-220C package ・Complement to type 2SB703/703A APPLICATIONS ・Designed for use in audio frequency power amplifier ,low speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-220) and symbol Emitter DESCRIPTION ・ Maximum absolute ratings(Ta=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SD743 VCEO Collector-emitter voltage 2SD743A VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 100 5 4 6 1 40 150 -50~150 V A A A W ℃ ℃ CONDITIONS Open emitter VALUE 100 80 V UNIT V THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case MAX 3.125 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD743 V(BR)CEO Collector-emitter breakdown voltage 2SD743A V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=1.0mA; IE=0 IE=1.0mA; IC=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=80V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=0.5A ; VCE=5V IC=0.1A ; VCE=5V;f=1.0MHz IC=10mA; IB=0 CONDITIONS 2SD743 2SD743A MIN 80 TYP. MAX UNIT V 100 100 5 2.0 2.0 10 10 20 40 10 200 MHz V V V V μA μA hFE-2 Classifications S 40-80 R 60-120 Q 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD743 2SD743A Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3