2SD745B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SB705/705A/705B APPLICATIONS ·Audio frequency power amplifier ·Suitable for output stages of 60~120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD745/745A/745B · Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SD745 VCBO Collector-base voltage 2SD745A 2SD745B 2SD745 VCEO Collector-emitter voltage 2SD745A 2SD745B VEBO IC ICM PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 140 150 160 140 150 160 5 10 15 120 150 -55~150 V A A W ℃ ℃ V V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD745 V(BR)CEO Collector-emitter breakdown voltage 2SD745A 2SD745B VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance IC=5A;IB=0.5 A IC=5A;IB=0.5 A VCB=140V; IE=0 VEB=3V; IC=0 IC=50mA ; VCE=5V IC=2A ; VCE=5V IC=0.2A ; VCE=5V IE=0; VCB=10V;f=1MHz IC=25mA; IB=0 CONDITIONS 2SD745/745A/745B MIN 140 150 160 TYP. MAX UNIT V 1.5 2.0 50 50 20 40 15 270 200 V V μA μA MHz pF hFE-2 classifications S 40-80 R 60-120 Q 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD745/745A/745B Fig.2 Outline dimensions 3