2SD748

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD748 2SD748A DESCRIPTION ·With TO-3 package ·High VCBO ·High power dissipation APPLICATIONS ·Low frequency power amplifier regulator for TV power supply applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SD748 VCEO Collector-emitter voltage 2SD748A VEBO IC IB B CONDITIONS Open emitter VALUE 250 200 UNIT V Open base 250 Open collector 5 3 1 TC=25℃ 80 150 -45~150 V Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD748 V(BR)CEO Collector-emitter breakdown voltage 2SD748A V(BR)EBO VCEsat VBE ICBO IEBO hFE Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain IE=5mA ;IC=0 IC=3A; IB=0.6A IC=1A ; VCE=5V VCB=200V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=10mA ;RBE=∞ CONDITIONS 2SD748 2SD748A MIN 200 TYP. MAX UNIT V 250 5 1.0 1.5 1.0 1.0 25 200 V V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD748 2SD748A Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3