2SD750

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD750 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Current Capability APPLICATIONS ·Designed for AF high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature 30 A PC 100 W Tj 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD750 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 4V 1.5 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 30 μA hFE-1 DC Current Gain IC= 1A; VCE= 4V 40 hFE-2 DC Current Gain IC= 5A; VCE= 4V 30 120 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 1 MHz hFE-2 Classifications Q 30-60 P 40-80 O 60-120 isc Website：www.iscsemi.cn