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2SD762

2SD762

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SD762 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2SD762 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD762 2SD762A DESCRIPTION ·With TO-220C package ·Wide area of safe operation APPLICATIONS ·For audio freuqency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER 2SD762 VCBO Collector-base voltage 2SD762A 2SD762 VCEO Collector-emitter voltage 2SD762A VEBO IC ICM IB B CONDITIONS VALUE 60 UNIT Open emitter 80 60 Open base 80 Open collector 8 4 6 1 TC=25℃ 30 150 -55~150 V V Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature V A A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD762 VCEO(SUS) Collector-emitter sustaining voltage 2SD762A VCEsat VBE ICBO IEBO hFE-1 hFE-2 Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=2 A;IB=0.4 A B 2SD762 2SD762A CONDITIONS MIN 60 TYP. MAX UNIT IC=0.2A; L=25mH 80 1.0 1.2 30 1 40 30 160 V V V μA mA IC=1A ; VCE=3V VCB=50V; IE=0 VEB=8V; IC=0 IC=0.1A ; VCE=3V IC=1A ; VCE=3V hFE-2 classifications Q 30-60 P 50-100 O 80-160 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD762 2SD762A Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3
2SD762 价格&库存

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