2SD768

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD768 DESCRIPTION ·With TO-220C package ·Complement to type 2SB727 ·DARLINGTON APPLICATIONS ·For medium speed and power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 120 120 7 6 10 40 150 -50~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=25mA; RBE=∞ IE=50mA; IC=0 IC=3A; IB=6mA IC=6A; IB=60mA IC=3A; IB=6mA IC=6A; IB=60mA VCB=120V; IE=0 VCE=100V; RBE=∞ IC=3A ; VCE=3V 1000 MIN 120 7 TYP. 2SD768 MAX UNIT V V 1.5 3.0 2.0 3.5 100 10 20000 V V V V μA μA Switching times ton toff Turn-on time IC=3A;IB1=-IB2=6mA Turn-off time 3.0 μs 1.0 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD768 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3