2SD772B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD772 2SD772A 2SD772B DESCRIPTION ·With TO-220C package ·High breakdown voltage ·High speed switching APPLICATIONS ·For power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SD772 VCBO Collector-base voltage 2SD772A 2SD772B VCEO VEBO IC ICM PC Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector dissipation Junction temperature Storage temperature TC=25℃ Open base Open collector Open emitter CONDITIONS VALUE 150 200 250 80 6 5 10 40 150 -50~150 V V A A W ℃ ℃ V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBE PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage 2SD772 ICBO Collector cut-off current 2SD772A 2SD772B IEBO hFE tf fT Emitter cut-off current DC current gain Fall time Transition frequency 2SD772 2SD772A 2SD772B CONDITIONS IC=0.2A; L=25mH IC=5A; IB=1A IC=5A ; VCE=4V VCB=150V; IE=0 VCB=200V; IE=0 VCB=250V; IE=0 VEB=6V; IC=0 IC=5A ; VCE=4V IC=5A ; VEB=-5V, IB1=0.8A IC=0.5A ; VCE=10V MIN 80 TYP. MAX UNIT V 1.6 1.5 V V 1.0 mA 0.1 14 1 40 mA μs MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD772 2SD772A 2SD772B Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3