2SD792

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD792 DESCRIPTION ·With TO-3 package ·High voltage ·Wide area of safe operation APPLICATIONS ·For line-operated horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION · Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=90℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 4 5 7 35 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; IB=0;L=25mH IE=10mA; IC=0 IC=4.5 A;IB=2 A IC=4.5 A;IB=2 A VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0 IEBO hFE tf tstg Emitter cut-off current DC current gain Fall time IC=4A; IBend=1.8A; LB=10μH Storage time 13 VEB=4V; IC=0 IC=4A ; VCE=10V 4 MIN 700 4 TYP. 2SD792 MAX UNIT V V 1.5 1.5 50 1.0 0.1 12 0.7 V V μA mA mA μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD792 Fig.2 Outline dimensions 3