2SD794A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD794 2SD794A DESCRIPTION ·With TO-126 package ·Complement to type 2SB744/744A ·High current 3A ·Excellent hFE linearity APPLICATIONS ·For use in audio frequency amplifier and general purpose applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SD794 VCEO Collector-emitter voltage 2SD794A VEBO IC ICM IB B CONDITIONS Open emitter VALUE 70 45 UNIT V Open base 60 Open collector 5 3 5 0.6 Ta=25℃ 1 V Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) V A A A PC Collector power dissipation TC=25℃ 10 150 -55~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD794 V(BR)CEO Collector-emitter breakdown voltage 2SD794A VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance IC=1.5A ;IB=0.15A IC=1.5A ;IB=0.15A VCB=45V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=0.5A ; VCE=5V IC=0.1A ; VCE=5V f=1MHz ; VCB=10V;IE=0 IC=10mA; IB=0 CONDITIONS 2SD794 2SD794A MIN 45 TYP. MAX UNIT V 60 0.3 0.8 2.0 2.0 1 1 30 60 70 100 60 40 320 MHz pF V V μA μA hFE-2 Classifications R 60-120 O 100-200 Y 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD794 2SD794A Fig.2 Outline dimensions 3