2SD797

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD797 DESCRIPTION ·With TO-3 package ·High current capability ·High power dissipation APPLICATIONS ·High power amplifier applications ·High power switching applications ·DC-DC converter applications ·Regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 80 7 30 8 200 175 -65~175 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=15A; IB=3A IC=15A; IB=3A VCB=100V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=15A ; VCE=5V IE=0 ; VCB=10V;f=1.0MHz IC=1A ; VCE=5V 60 10 400 1.5 MIN 80 TYP. 2SD797 MAX UNIT V 1.5 2.5 0.1 0.1 200 V V mA mA pF MHz Switching times ton tstg tf Turn-on time Storage time Fall time RL=10Ω;IB1=-IB2=0.5A; VCC=50V 2.5 6.0 1.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD797 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3