2SD799

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD799 DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON APPLICATIONS ・Igniter applications ・High voltage switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 600 400 5 6 1 30 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD799 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V VCEsat VBEsat Collector-emitter saturation voltage IC=4A ;IB=0.04A IC=4A; IB=0.04A 2.0 V Base-emitter saturation voltage 2.5 V ICBO Collector cut-off current VCB=600V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE-1 DC current gain IC=2A ; VCE=2V 600 hFE-2 DC current gain IC=4A ; VCE=2V 100 VECF COB Diode forward voltage IE=4A; IB=0 f=1MHz;VCB=50V 35 3.0 V Collector output capacitance pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD799 Fig.2 Outline dimensions 3