2SD803

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2SD803 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 2000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown VoltageV(BR)CEO= 100V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current -Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 120 100 6 8 1 100 150 -65~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD803 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 30mA B 1.5 V ICBO Collector Cutoff current VCB= 120V; IE=0 100 μA IEBO Emitter Cut-off current VEB= 6V; IC= 0 10 mA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 2000 hFE-2 DC Current Gain IC= 40A ; VCE= 4V 7 isc Website：www.iscsemi.cn 2