2SD812

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD812 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB747 APPLICATIONS ·High power amplifier applications. ·Suitable for 15~20W home stereo output amplifier and voltage regulator. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 8 A PC 40 W ℃ TJ 150 Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD812 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V 1.8 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 50 μA hFE-1 DC Current Gain IC= 20mA; VCE= 5V 20 hFE-2 DC Current Gain IC= 1A; VCE= 5V 40 200 hFE-3 DC Current Gain IC= 3A; VCE= 5V 20 COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 90 pF fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 15 MHz hFE-2 Classifications R 40-80 Q 60-120 P 100-200 isc Website：www.iscsemi.cn 2